| PART |
Description |
Maker |
| A3195EU A3195LLT 3195 A3195LU A3195 A3195ELT |
PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 保护，高温，霍尔效应锁存主动下拉
SENSOR IC CAC ANALOG OUT 8-DIP
PROTECTED. HIGH-TEMPERATURE. HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
Protected,High-Temperature,Oper-Collector Hall-Effect Latch(保护型，工作于高温，霍尔效应锁存器（
PROTECTED/ HIGH-TEMPERATURE/ HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
PROTECTED HIGH-TEMPERATURE HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
From old datasheet system
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| W0603HT-01-100R-G W0603HT-01-100R-J W1206HT-01-100 |
High Temperature TaNFilm㈢ Chip Resistors
High Temperature TaNFilm垄莽 Chip Resistors
High Temperature TaNFilm? Chip Resistors
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.1 W, 1 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0805
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.0625 W, 5 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0603
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.125 W, 2 %, 100 ppm, 100 ohm, SURFACE MOUNT, 1206
|
Welwyn Components Limited
TT Electronics / Welwyn
Welwyn Components, Ltd.
Welwyn Components Limit...
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
| AM27C1024-300DIB AM27C1024-350/BUA AM27C1024-205DC |
Constant Frequency Current Mode Step-Up DC/DC Controller in SOT-23; Package: SOT; No of Pins: 6; Temperature Range: -40°C to 125°C
High Efficiency Monolithic Synchronous Step-Down Regulator; Package: MSOP; No of Pins: 8; Temperature Range: -40°C to 125°C
Single and Dual Micropower High Side Switch Controllers in SOT-23; Package: SOT; No of Pins: 6; Temperature Range: -40°C to 125°C
Single and Dual Micropower High Side Switch Controllers in SOT-23; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 125°C
150mA, Micropower, Low Noise, VLDO Linear Regulator; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 125°C
High Efficiency Thermoelectric Cooler Controller; Package: QFN; No of Pins: 32; Temperature Range: -40°C to 125°C
High Efficiency Thermoelectric Cooler Controller; Package: SSOP; No of Pins: 28; Temperature Range: -40°C to 125°C
Micropower, Regulated 3.3V/5V Charge Pump with Shutdown in SOT-23; Package: SOT; No of Pins: 6; Temperature Range: -40°C to 125°C
8-Channel, 12-Bit, 1.25Msps Sampling ADCs; Package: SSOP; No of Pins: 48; Temperature Range: 0°C to 70°C
x16 EPROM x16存储
Single and Dual Micropower High Side Switch Controllers in SOT-23; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 125°C
|
OlympicControls, Corp.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| TMPG06-10 TMPG06-10A TMPG06-7.5A TMPG06-6.8 TMPG06 |
PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions
|
Vishay Siliconix
|
| PHT |
High Precision Wraparound - High Temperature (230 掳C) Thin Film Chip Resistors
|
Vishay Siliconix
|
| EL2223 EL2223C EL2223J EL2223CJ EL2223L/883B EL222 |
12-Bit, 3.3V, 130MSPS, CommLinkTM High Speed D/A Converter (TSSOP); Temperature Range: -40°C to 85°C; Package: 28-SOIC
Laser Diode Driver with Waveform Generator; Temperature Range: 0°C to 70°C; Package: 28-QFN T&R
12-Bit, 3.3V, 130MSPS, CommLinkTM High Speed D/A Converter (TSSOP); Temperature Range: -40°C to 85°C; Package: 28-TSSOP
High Speed Operational Amplifier
Dual, 500 MHz High Speed, Operational Amplifier
|
Elantec Semiconductor
|
| MBRB2545CT |
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
|
Sangdest Microelectroni...
|
| IHTH-1125MZ-5A |
High Current Through Hole Inductor, High Temperature Series
|
Vishay Siliconix
|
| TPSMC7.5 TPSMC7.5A TPSMC6.8A TPSMC6.8AHE3_57T TPSM |
Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions
|
Vishay Siliconix
|
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